Atomic Layer Deposition of Cu(I) Oxide Films Using Cu(II) bis(dimethylamino-2-propoxide) and Water

Avila, J. R.; Li, Z.; Peters, A. W.; Ortuño, M. A.; Cramer, C. J.; Hupp, J. T.; Farha, O. K.
Dalton Trans. 2017, 46, 5790 (doi:10.1039/c6dt02572b).

To grow films of Cu₂O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å/cycle was measured using an in-situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(I).